Electronic and shallow impurity states in a corner

Abstract

The electronic and impurity states in the corner of well material surrounded by barrier material are investigated using the variational method. The results show that the binding energies of impurity ground states tend to the value of the third impurity excited states in the bulk when the impurity approaches the corner. The dependence of the ground-state electronic level and impurity binding energy on the dielectric mismatch between the well material and barrier material is also discussed.