Abstract
The effects of image potential due to dielectric mismatch on electronic and shallow donor impurity states in quasi-one-dimensional GaAs-Ga1−xAlxAs quantum-well wires with rectangular cross section for both finite barrier and infinitely high barrier are investigated. The results have shown that, when the image potential is included, the variations in electronic energy level and impurity binding energy are considerable, especially when the cross-section dimensions of the quantum wire become small. The results also showed that the effects of the impurity ion image potential on impurity binding energy are much larger than those of electron image potential.
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