Abstract
Temperature dependance of energy band gap of NbS2 semiconducting material was studied. NbS2 is an important class of two-dimensional semiconducting material with properties that enable its use in diverse areas. Electronic and optical properties of NbS2 are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Energy dispersive analysis by X-ray (EDAX) was used to verify the compositional elements of NbS2 crystals. The absorption coefficient was determined at room temperature in the wavelength range 800–2000 nm. Optical parameters of NbS2 have been estimated. The direct optical energy gap was found as 1.550 eV. The temperature dependence of energy band gap in the temperature range (303–423 K) has been reported. Results obtained are represented and discussed.
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