Abstract
The eletronic and optical properties of amorphous GaSe thin films produced by vacuum evaporation were investigated using X-ray photoemission spectroscopy (XPS) and transmittance spectroscopy techniques. XPS measurements allowed the determination of the valence band energy and showed the chemical bonding and the charge transfer between Se and Ga atoms. Transmittance measurements allowed the determination of the optical gap, refractive index and extinction coefficient in the low and high absorption regions. Using the Wemple and DiDomenico single oscillator model we also found the oscillator and the dispersive energies. From the valence band and optical gap energies, the conduction band was found and an energy level diagram for f-GaSe is proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
