Abstract
The electronic and optical properties of GaAsSbN∕GaAs quantum well (QW) laser are investigated using the multiband effective mass theory and the non-Markovian gain model. The results are compared with those of type II GaAsSb∕GaAs QW laser using a self-consistent method. The GaAsSbN∕GaAs QW structure shows that a relatively low compressive strain is required to obtain 1.3μm wavelength compared to the GaAsSb∕GaAs QW structure. The reduction effect of the compressive strain is shown to be dominant for QW structure with a larger N composition or a thick well width. We know that the GaAsSbN∕GaAs QW structure has significantly larger optical gain than the GaAsSb∕GaAs QW structure. This is because the interband matrix element of the former is much larger than that of the latter. We expect that the GaAsSbN∕GaAs QW structure has the improved lasing characteristic compared to the GaAsSb∕GaAs QW structure.
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