Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms

Abstract

Contactless electroreflectance (CER) spectroscopy has been applied to investigate the optical transitions in Ga(In)NAs/GaAs quantum well (QW) structures containing Sb atoms. The identification of the optical transitions has been carried out in accordance with theoretical calculations which have been performed within the framework of the effective mass approximation. Using this method, the bandgap discontinuity for GaN 0.027As 0.863Sb 0.11/GaAs, Ga 0.62In 0.38As 0.954N 0.026Sb 0.02/GaAs, and Ga 0.61In 0.39As 0.963N 0.017Sb 0.02/GaN 0.027As 0.973/GaAs QW structures has been determined. It has been found that the conduction-band offset is ∼50 and ∼80% for GaN 0.027As 0.863Sb 0.11/GaAs and Ga 0.62In 0.38As 0.954N 0.026Sb 0.02/GaAs QWs, respectively. It corresponds to 264 and 296 meV depth QW for electrons and heavy-holes in GaN 0.027As 0.863Sb 0.11/GaAs QW; and 520 and 146 meV depth QW for electrons and heavy-holes in Ga 0.62In 0.38As 0.954N 0.026Sb 0.02/GaAs QW. In the case of the Ga 0.61In 0.39As 0.963N 0.017Sb 0.02/GaN 0.027As 0.973/GaAs step-like QW structure it has been shown that the depth of electron and heavy-hole Ga 0.61In 0.39As 0.963N 0.017Sb 0.02/GaN 0.027As 0.973 QW is ∼144 and ∼127 meV, respectively.