Abstract
AbstractThe spontaneous emission spectrum of an electron–hole plasma (EHP) in direct‐gap Ga(As, P) near the Γ‐X cross‐over is investigated as a function of the excited electron–hole pair density. Special attention is paid to a multicomponent EHP, i. e. to the case of an additional occupation of the conduction band X valleys. The EHP luminescence bands and the excitation induced band gap shrinkage are calculated in random phase approximation (RPA). The theoretical results for the reduction of the band gaps are compared with data obtained from luminescence experiments. The EHP luminescence is investigated at T = 2 K on high‐purity direct‐gap GaAs0.55P0.45 islands using an intense band‐edge resonant dye‐laser excitation.
Published Version
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