Abstract
It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron–hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.
Highlights
It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates
The electrostatic method of carrier doping into organic Mott insulators with field-effect transistor (FET) structure has been implemented by the authors[8,9]
By fabricating electric-double-layer transistors (EDLTs) based on thin single crystals of k-Cl, we realized for the first time both electron and hole doping into the organic Mott insulator
Summary
It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. It is difficult to perform such measurements on high-Tc cuprates for the following three reasons They are mostly either only hole-doped or electron-doped, and the crystallographic structures of the parent materials are often different. They require a strong electric field to tune their band filling owing to their high half-filled carrier density (in the order of 1015 cm À 2). Since they are charge-transfer-type insulators, electrons and holes are doped into different electronic orbitals, which may obscure the pure doping asymmetry. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping
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