Abstract
This paper deals with the photoemission activity of radiation defects in crystalline and vitreous silica. Spectral and kinetic parameters and the concentration of defects in the surface layer and the bulk of the material were determined. Some features of the distribution of radiation-induced defects along the depth of samples having different degrees of order were analyzed. Regularities of relaxation of excited states of emission centers suggested that thermally activated processes were involved in the release of electrons.
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