Abstract
Modulation-doped Al0.3Ga0.7As/GaAs heterostructure electron wave interference devices with fractional layer superlattices are fabricated. The periods of the fractional layer superlattice in the electron wave interference devices are 16, 12, and 8 nm, respectively. These devices show drain current oscillation due to electron wave interference at 4.2 K. The oscillation period is determined by the period of the fractional layer superlattice. From the analysis of the drain current oscillation, the peaks of the structure function agree with the multiples of the periods of the fractional layer superlattice.
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