Abstract
We calculate electron tunneling for an Al2O3/NiAl(110) structure in scanning tunneling microscopy (STM) by employing a simple and exactly solvable one-dimensional model. The calculation reproduces the essential features of the apparent height of an Al2O3 thin film vs. sample bias curve for an Al2O3(0.5 nm)/NiAl(110) structure studied by Hansen et al. [Surf. Sci. 475 (2001) 96] for the appropriate electron affinity of the Al2O3 film, about 1.35 eV. Origins of fine structures found in the calculated transmission probability vs. sample bias curves are discussed.
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