Abstract
Deep electron trap levels in n-InP single crystals grown by the synthesis solute-diffusion (s.s.d.) method have been studied by d.l.t.s. and admittance-spectroscopy techniques. Three deep trap levels were found and the dominant trap level was shown to have a depth of 0.26 eV and capture cross-section of 0.9 ≈ 1.2 × 10−12cm2.
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