Electron transport tuning of graphene by helium ion irradiation

Abstract

This article reviews charge carrier transport phenomena in single-layer graphene, in which crystalline defects are generated by helium-ion-beam irradiation using a helium-ion microscope. Crystalline defects work as electron scatterers, and the conductivity drastically decays as ion dose increases. Moreover, real-time conductivity monitoring during ion beam scans over the graphene surface is demonstrated. In cryogenic measurements under magnetic fields, defective graphene exhibits negative magnetoresistance, suggesting that strong localization occurred in this two-dimensional electron system, which survived even at room temperature. The localized state contributes to inducing a transport gap around the Dirac point, where the density of states is at its minimum, and it enables field-effect control of the carrier transport by tuning the carrier density. The fabrication and operation of field-effect transistors with defective graphene channels are demonstrated.