Abstract
Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
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