Abstract
The influence of Cu, Nb and Ta additions on the crystallization of amorphous FeSiB based alloys was studied. For each alloy, coherent electrical resistivity and thermoelectric power behaviors were observed and related to the mean grain sizes. Anomalous electron transport parameters strongly influenced by the electron scattering at grain boundaries were explained using the Mayadas-Shatzkes model. From values of the local Avrami exponent, the nucleation rate and the growth kinetics were determined. The influence of relaxation processes on Avrami exponent was investigated.
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