Abstract
The electron swarm parameters in HSi(OC2H5)3 (triethoxysilane, TRIES) vapor have been investigated for relatively wide ranges of reduced electric field (E/N). Based on the arrival-time spectra (ATS) method for electrons using a double-shutter drift tube, the drift velocity and the longitudinal diffusion coefficient were measured for the E/N=20–5000 Td, and the ionization coefficient was obtained for E/N=300–5000 Td. The results were compared with those for SiH4 and Si(OC2H5)4 (tetraethoxysilane, TEOS), to show characteristics similar to the parameters in TEOS. We also determined the electron collision cross sections for TRIES by means of the Boltzmann equation analysis.
Published Version
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