Abstract
Thin-film metal-insulator-semiconductor structures have been prepared by deposition of n-type indium telluride films on partially oxidized aluminum layers. An analysis of the current-voltage characteristics indicates the current transfer mechanism in these structures to be of the Schottky thermionic emission type in low field and space-charge limited at high fields. The barrier height presented to the conduction electrons in such structures has also been calculated from the temperature dependence of the I-V characteristics.
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