Abstract
The development of impact ionization in semiconductors has been considered. A transport equation for the electron distribution function in the presence of impact ionization has been derived. It has been found that the collison integral of this equation is nonlinear with respect to the distribution function. The relation between the solutions of this equation and the usual Boltzmann equation have been determined. A Monte Carlo method for numerical calculations in the presence of impact ionization has been developed. The results of numerical calculations carried out using a simplified model of indium antimonide are presented.
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