Abstract
A novel approach to realize quasi-one-dimensional electron gases with high electron densities using an undoped GaAs/Al x Ga 1− x As heterostructure is studied. The quasi-one-dimensional electron gas is field effect induced via a narrow top gate and the electrons are extracted from ion-implanted ohmic regions. The wires are characterized by low temperature magnetotransport experiments. The quasi-one-dimensional nature of the transport manifests itself in the observed depopulation of the one-dimensional subbands in a magnetic field perpendicular to the heterointerface and a model is presented to obtain a realistic estimation of the density distribution underneath the narrow gate and to determine the effective wire width. The effective width is found to be comparable to the gate width. Finally, the applicability of this approach to design electron–electron coupling structures is demonstrated by studying samples containing a narrow split across the gate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
