Abstract
The properties of conduction electrons in P-doped Si nanocrystals embedded in insulating glass matrices have been studied by electron spin-resonance spectroscopy. For heavily P-doped samples, a broad conduction electron signal is observed at low temperatures. The width of the signal is found to be much broader than that of P-doped bulk Si crystals. The temperature dependence of the signal intensity obeys the Curie law even when the P concentration is very high. This suggests that in P-doped nanocrystals donor levels do not merge into the conduction band even at very high P concentration, and also provides evidence that Si nanocrystals smaller than a certain threshold size do not become metallic, at least when they are prepared under an equilibrium condition.
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