Abstract
Coupling graphene’s excellent electron and spin transport properties with a higher spin–orbit coupling (SOC) material allows tackling the hurdle of spin manipulation in graphene due to the proximity to van der Waals layers. Here, we use magneto-transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5 K. The electron spin resonance measurements are performed in the frequency range of 18–33 GHz, which allows us to determine the g-factor in the system. We measure the average g-factor of 1.91 for our hybrid system, which is a considerable shift compared to that observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.
Highlights
Ts, or via the spin Hall effect,20,22 in Coulomb-drag effect studies,25 and in the modulation of the Schottky barrier height.26 Among these, only a couple of studies reported the electron transport behavior in Gr-on-MoS2 at low temperatures.18,25 A direct measurement of the g-factor on such a hybrid system has not been performed until today
Coupling graphene’s excellent electron and spin transport properties with a higher spin–orbit coupling (SOC) material allows tackling the hurdle of spin manipulation in graphene due to the proximity to van der Waals layers
Graphene can be employed as an Ohmic contact material for MoS2.12,13 It is assumed that valley-Zeeman and Rashba-SOC are induced in Gr-on-transition metal dichalcogenides (TMDCs) via the proximity effect
Summary
We use magneto-transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5 K.
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