Abstract
The nature of defects in porous silicon has been investigated by electron spin resonance measurements. The main defect has trigonal symmetry with a principal axis along the <111> axis, and the principal values of the g-tensors, g// and g⊥, are 2.0022 and 2.0078, respectively. This defect is identified as a silicon dangling bond located at the surface or at the interface between c-Si and SiO2. Light-induced defect creation and accompanying photoluminescence fatigue have been observed. These changes are partly, but not completely, recovered by thermal annealing, unlike hydrogenated amorphous silicon. Consequently, it is suggested that the light-emitting region of porous silicon is mainly the single-crystal phase.
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