Abstract
We measured the electron spin relaxation times τs in GaAs/AlGaAs multiple quantum wells (MQWs) grown on slightly misoriented GaAs(110) substrates. The τs of the MQW on misoriented GaAs(110) decreased when the misorientation angles were increased. The bulk inversion asymmetry component of the D’yakonov–Perel’ spin relaxation in the misoriented (110) MQWs was calculated to verify the origin of the decrease in the τs. A comparison between the experimental and calculated results revealed that the decrease in the τs was attributed to the emergence of in-plane effective magnetic fields in the (110) MQWs due to the misorientation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
