Abstract
In this work, the electron spin dynamics of bulk p-GaAs doped with Be grown by molecular beam epitaxy is investigated by using the time-resolved magneto-optical Kerr rotation technique. The spin relaxation/dephasing times T1 and T2* are systematically investigated as a function of hole doping density and photo-excitation density as well as temperature. The complex hole doping density dependence of spin relaxation times T1 and T2* is observed experimentally, which agrees well with predictions of the kinetic spin Bloch equation theory published previously [J. Jiang and M. Wu, Phys. Rev. B 79, 125206 (2009)]. D'yakonov-Perel's mechanism [M. Dyakonov and V. Perel, Sov. Phys. Solid State 13, 3023 (1972)] is discussed to dominate the electron spin relaxation process in p-GaAs, with the effect of hole screening proven to play an important role.
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