Abstract
In this Rapid Communication, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\mathrm{Si}$ (${p}_{\mathrm{Si}}=4.7%$) is about four times larger than that of ${}^{13}\mathrm{C}$ (${p}_{\mathrm{C}}=1.1%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in a strong magnetic field ($B>300\phantom{\rule{0.28em}{0ex}}\mathrm{G}$) is longer than that of nitrogen-vacancy (NV) centers in ${}^{13}\mathrm{C}$ nuclear spin bath in diamond. In addition to the smaller gyromagnetic ratio of $^{29}\mathrm{Si}$, and the larger bond length in SiC lattice, a crucial reason for this counterintuitive result is the suppression of the heteronuclear-spin flip-flop process in a finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.
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