Abstract
The electron spectrum of δ-doped quantum wells i n n-GaAs is investigated by means of the Thomas–Fermi (TF) method at finite temperatures. This method shows rapid convergence and good accuracy. Under two-dimensional (2D) doping concentrations 10 13…2×10 13 cm −2, the simplest TF method ( T=0 K) can be used to calculate the profiles of the potential well up to T≈200 K. The simplest TF method yields correct results for the electron concentrations and the differences of the electron energy sublevels in the quantum well up to room temperature ( T∼300 K).
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