Abstract
The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs step-quantum well is calculated and expressions for the electronic states are presented. The system is modeled considering T=0K and a single parabolic conduction band, which is split into a subbands system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. Also, the emission spectra for several scattering configurations are discussed. The interpretation of the singularities found in the spectra is given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.
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