Abstract
In this work, we present the study of an intra-band electron Raman scattering process for a semiconductor quantum well with step-barriers, developed in a GaAs/AlxGa1−xAs matrix. For the solution of this problem, the existence of an electron in a single conduction band and a system under the effect of an external electric field in the direction of confinement were considered. In addition, we will study the electron states for this system. In this study, we calculate the differential cross-section and the net Raman gain, so that the corresponding emission spectra (which are interpreted and discussed) are obtained. For this, we consider a simple parabolic conduction band, which is unfolded into a sub-band system due to confinement. Moreover, the exact solutions of the electron states considering the approximation of the envelope function are obtained. In like manner, we make a comparison between the quantum well with step-barriers with other systems such as the asymmetric double quantum well and the step-quantum well with the objective of studying the differences between these three systems.
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