Abstract
Cobalt silicide is a popular compound in semiconductor technology for fabricating resistive microcomponents and metallization. In advanced silicon-based cryogenic devices, such as radiation detectors and coolers, the electronic energy distribution is fundamentally determined by the thermal state of the mesoscopic system. In this work, electron-phonon heat transport at cryogenic temperatures was studied in a silicide formed by high fluence ion implantation of Co into Si. A heat flow between electrons and phonons was found to be proportional to (Telp−Tphp) with p=3.3. The electron-phonon coupling constant that characterizes the thermal resistance between electrons and phonons was derived from the power dependence of the electron temperature measured well bellow 1K. The constant was found to be temperature dependent in the implanted cobalt silicide.
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