Abstract
CoCu granular alloys have been prepared at room temperature using ion implantation of Co + ions into Cu host at 160 keV. The Cu layer has been deposited on silicon substrate by DC sputtering at room temperature. The as-implanted and annealed CoCu alloys at different temperatures have been characterized by X-ray diffraction, Rutherford back scattering (RBS) for the structural properties, resistivity and magnetization measurements for the magneto-transport properties. Magnetization measurements show a classical superparamagnetic behavior as expected for granular alloy. The observation of the giant magnetoresistance (GMR) at 300°C annealing temperature indicates the beginning of Co phase decomposition. The decrease of the GMR at high annealing temperature is due to the atomic Co and Cu diffusion into Si substrate as supported by X-ray and RBS analysis.
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