Abstract
A new, light-induced electron paramagnetic resonance (EPR) signal with apparent tetragonal symmetry has been observed in n-type Al0.68Ga0.32As:Sn layers grown on Sl-GaAs. A comparison with previous magnetic resonance data for the shallow Si donor indicates that the signal corresponds to the shallow, X-valley-associated effective-mass state of the Sn donor. The optical behaviour of the new signal shows that the shallow state is a metastable state of the Sn DX centre. The nearly vanishing EPR intensity for magnetic fields in the layer is attributed to the large spin-valley interaction expected for the shallow Sn donor in indirect AlGaAs.
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