Abstract
A metastable photoinduced electron paramagnetic resonance (EPR) signal at low temperatures is reported for GaN alloyed with boron (i.e., BxGa1−xN) epitaxial layers grown at temperatures ranging from 840 to 1090° C. An isotropic EPR line with g = 2.004 is observed with an intensity depending on the growth temperature for all the samples with boron content between 0.73% and 2.51%. The temperature dependence of EPR intensities is compared with the results of high-resolution photoinduced transient spectroscopy. This enables a link between particular traps and the EPR signal. The activation energies of these traps are consistent with the theoretical position of the VN–VGa complex. Thermal annihilation of the EPR signal with 30 meV activation energy corresponds to shallow donor ionization. A model explaining the light-induced EPR signal that involves redistribution of electrons between deep and shallow donors, mediated by photoionization to the conduction band, is proposed.
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