Electron paramagnetic resonance calculations for hydrogenated Si surfaces

Abstract

Electron paramagnetic resonance (EPR) signatures, more specifically the elements of the electronic $g$ tensor, are calculated within density functional theory for hydrogenated Si(111), Si(001), Si(113), Si(114), $\mathrm{Si}(11\overline{2})$, and Si(110) surfaces. Thereby both perturbation theory and a more sophisticated Berry phase technique are applied. Specific defects on different surface orientations are shown to reproduce the resonances at $\overline{g}=2.0043$ and $\overline{g}=2.0052$ measured for hydrogenated microcrystalline silicon: The latter value is argued here to originate from regions with low hydrogen coverage; the resonance at $\overline{g}=2.0043$ is shown to appear in positions with dihydride environment, where an H atom is directly bound to the silicon dangling-bond atoms. A third group of EPR signals with considerably larger $\overline{g}$ values between 2.006 and 2.009 is predicted for highly symmetric dangling bonds resembling single dangling-bond defects in silicon bulk material. As the exact value depends strongly on local strain, this type of defect can explain a less intense signal with large $g$ strain observed in microcrystalline as well as in amorphous material.