Electron mobility in quantized β-SiC inversion layers

Abstract

Electron transport properties in β-SiC quantized inversion layers have been studied and the results of electron mobility calculations at room and higher temperatures have been reported. To do so, we have developed a Monte Carlo simulator used in conjunction with the self-consistent solution of the Poisson and Schrödinger equations. We show that for a fixed inversion-charge concentration, β-SiC inversion-layer electrons spread less into the bulk than Si ones as a consequence of the effective mass values. Therefore, the defects of the SiO2/β-SiC (interface roughness, charged centers) will strongly affect electron transport properties.