Abstract
Use is made of the Hot Electron Theory [2] to treat the problem of the distribution function of electrons in polar semiconductors at intermediate and high electric fields. No assumption is made on the value of the ratio of ‘drift to thermal energy’. Values of this ratio, temperature and mobility of electrons as a function of the applied field are presented. The relation between intrinsic breakdown field and lattice temperature is calculated and compared with experimental results for some alkali halides. The effect of ionized impurity scattering on electron temperature, drift velocity and high field mobility is calculated and analysed. A comparison is presented between calculated and experimental values of mobility in n-type ln Sb at 77°K.
Published Version
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