Abstract
Herein, the low‐field mobility in bulk, multilayer, and monolayer of molybdenum disulfide (MoS2) is calculated using a quantum kinetic approach. Analytical expressions are obtained for mobility of 3D and 2D electrons for scattering by out‐of‐plane flexural and in‐plane acoustic phonons (deformation potential and piezoelectric scattering), nonpolar and polar optical (PO) phonons, charged impurities, and surface roughness. It is shown that the known experimental Hall data in bulk MoS2 should be analyzed in the presence of two types of free electrons contributing to the charge transport: 3D electrons in the conduction band and 2D electrons in the quantum layers. Calculations show that the electron mobility in bulk, multilayer, and monolayer MoS2 is mainly limited by acoustic (deformation potential) and PO phonons scatterings in a wide temperature range of 100–700 K. For temperatures below 100 K, electron mobility is determined by the ionized impurity scattering.
Published Version
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