Abstract
An oscillatory dependence of the electron mobility on the quantum well (QW) thickness in a AlGaAs/GaAs/AlGaAs heterostructure with double-sided modulation doping has been observed experimentally. A steep decrease in mobility with increasing electron concentration in the QW is established. The conditions for an increase in mobility on introducing a thin barrier into the QW are determined. The first experimental observation of an increase in mobility by a factor of 1.3 in a QW of thickness L=26 nm upon introducing a thin (1–1.5 nm) AlAs barrier is reported.
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