Abstract
The GaAs(100)-Ga2Se3 heterostructures have been investigated by transmission and scanning electron microscopy. The sequence of structural transformations at the GaAs(100) surface during treatment in selenium vapor has been determined. It has been found that the preliminary treatment of the GaAs(100) surface in selenium vapor increases the orienting effect of the GaAs(100) substrate on the GaAs film growth.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Paper Title
Journal
Date
