Abstract
The structure and properties of TiNx electrodes obtained by plasma-enhanced atomic layer deposition in the 20 nm TiNx/10 nm La: HfO2(Hf0.5Zr0.5O)/20 nm TiNx/1 μm SiO2 system have been studied by electron microscopy and electron energy loss spectroscopy. It is shown that the electrode material has a TiNxOy composition, the band gap width varies within 1.7–2.5 eV, the resistivity is 208 μOm cm and the value of the temperature coefficient of resistance (20–100°C) is equal to –31.4 ⋅ 10–6 1/K.
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