Abstract

Abstract Boules of aluminium oxide containing various impurities, grown by the Verneuil technique, have been examined by transmission electron microscopy. Most of the samples have dislocation densities ∼5×105 cm−2, excluding grain boundaries. This is two orders of magnitude higher than that for comparable undoped crystals. There is a higher incidence of low angle boundaries and the characteristics of these are described. The samples rarely contain internal precipitates; furthermore, precipitates in sapphire do not normally create significant numbers of dislocations. The interactions of a singularity with a basal network of dislocations with ⅓〈1120〈 Burgers vectors are analysed. The configuration is not consistent with the singularity being a 〈1010〉 dislocation, but it can be explained by assigning the singularity a ⅓〈1011〉 vector.

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