Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy

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First results of the electron-microscopic investigation of thin silicon carbide (SiC) layers grown on silicon using a new method of solid phase epitaxy are presented. It is shown that, at the initial stage of epitaxial growth, a transition layer is formed which consists of various SiC polytypes. This layer occurs at the interface between the substrate and a single-crystalline SiC layer possessing predominantly a 3C polytype structure. It is established that pores with dimensions ranging from a fraction of micron to several dozen nanometers are formed in a near-surface layer of the silicon substrate, which favor the growth of epitaxial, weakly strained single-crystalline SiC layers.