Abstract
The electron lifetime has been measured by time-resolved differential transmission experiments in heavily carbon-doped p-type InGaAs and GaAsSb, grown lattice matched on InP by molecular beam epitaxy. It is found inversely proportional to the square of the doping in both alloys, a result typical of Auger recombination dominated processes. It is shown that the electron lifetime is almost twice larger in GaAsSb than in InGaAs for large p-type doping, thus confirming that GaAsSb is a strong contender for the base material of double heterostructure bipolar transistors on InP.
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