Abstract
We investigated alkali metal doping mechanism by comparative analysis between an Mg-Alq3 co-deposition (Mg:Alq3) and an Mg deposition on Alq3 films (Mg/Alq3). The operating voltage decreased by 0.4 V and the luminance increased by 60 cd/m2 at 11 mA/cm2 for devices constructed from the Mg:Alq3. However, the device characteristics of Mg/Alq3 samples were degraded. Our experimental results using an in-situ photoemission study showed that alkali metal doping in Alq3 did not induce band bending, but reduce electron injection barrier by charge transfer from alkali metals to Alq3 molecules.
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