Abstract
The organic field-effect transistors (OFETs) have developed rapidly in recent years. However, compared with the p-type OFETs, the n-type devices always show poorer performance due to their hard electron injection and low stability. It is necessary to further improve the charge injection properties of n-type OFETs. In this work, indium (In) layers, as an interlayer above contacts, were adopted for electron injection improvement in the n-type poly((N, $\text{N}^{\prime }$ -bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl)-alt-5, $5^{\prime }$ -(2, $2^{\prime }$ -bithiophene)) (N2200) OFETs. The injection barrier, such as Schottky barrier, at the metal/semiconductor interface was effectively weakened with the In interlayers thickness ( ${T}_{In}$ ) increasing from 0 to 6 nm. The mechanism of electron injection changed from thermionic emission to tunneling, as the ${T}_{In}$ reaching 6 nm. It results in a marked improvement in electrical properties for N2200 OFETs. The mobility increased from 0.09 to 0.29 cm ${}^{2}\cdot \text{V}^{-1}\cdot \text{s}^{-1}$ while the subthreshold swing decreased from 2.7 to 0.8 $\text{V}\cdot $ dec−1 with the ${T}_{In}$ . This work provides an efficient approach for the electron injection improvement in n-type OFETs.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call