Abstract
Spherical complex optical potential formalism and complex scattering potential–ionization contribution are used to generate electron impact total inelastic and total ionization cross section, respectively, for the atoms In, Sn, Sb, Te, I and Xe. Roothaan–Hartree–Fock calculations are used to approximate the atomic orbital wavefunction and hence to model the target charge densities and static potentials for these atoms. The results for the above targets are presented for energies ranging from ionization threshold to 2000 eV. Graphs are plotted with other theories and measurements wherever available. We have obtained a systematic and uniform result with an overall agreement with other data for all the elements presented here.
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