Abstract
CNx thin films were prepared using low pressure plasma enhancedchemical vapour deposition, and then bombardedby low-energy N2+. The compositions before and after N2+bombardment were compared using x-ray photoelectron spectroscopy. Theelectron field emission characteristics of CNx thin films before andafter N2+ bombardment were studied under the pressure of 10-6 Pa.For the samples, the turn-on emission field decreased from 2.5 V/µmto 1.2 V/µm while the stable current density increased from0.5 mA/cm2 to a value larger than 1 mA/cm2 before and after thebombardment. Our results illustrate that the field emission characteristicswere improved after the bombardment of N+2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
