Feasibility of Antireflection and Passivation Coatings by Atmospheric Pressure PECVD

Abstract

An innovative method to obtain antireflection and passivation coatings on p-type crystalline silicon solar cells is presented. The method consists in the growth of hydrogenated silicon nitride films (SiNx:H) by atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). Compared to industrial process, using this kind of processing may allow an augmentation of the silicon solar cell production throughput and yield enabling a reduction of the cost of photovoltaic systems. The optical and passivation properties of the SiNx:H films grown by AP-PECVD are determined and compared with the standard low pressure plasma enhanced chemical vapor deposition (LP- PECVD) films. Minority carrier lifetime of 1ms was reached. Solar cells coated with AP-PECVD SiNx:H films were made, and their performances were compared with standard SiNx:H coated cells. The same cell efficiency is obtained for the two groups of cells proving the interest of the AP-PECVD for the solar cell industry.