Electron field emission from semiconducting nanowires

Abstract

In this paper we report on investigations of field emission (FE) properties of semiconducting (SiC, ZnO) one-dimensional (1D) nanostructures – nanowire/nanorod arrays, and fabrication of low-voltage field emission display (FED) devices based on these 1D nanomaterials. SiC nanowires were grown on Ni-coated Si substrates using a thermal metal-organic chemical vapor deposition (MOCVD) technique, and ZnO nanostructures were grown on gold-coated Si substrates by a thermal CVD method. Electron field emission properties of SiC and ZnO nanostructures were examined in plane geometry using a flat phosphor screen. The interrelation between the FE characteristics (emission thresholds, current density, surface uniformity, etc.) and microstructure and surface morphology of the produced 1D nanostructures was established. Diode-type FED devices (flat vacuum lamps) with SiC-nanowire-based cathodes were developed and fabricated. The FEDs are characterized by low threshold and operating electric fields – lower 2 V/μm and 5 V/μm, respectively, high current density and brightness, and stable performance of the nanowire-based cathodes.