Abstract
In this paper, electron field emission properties and fluorescent displays of 300 nm thick nitrogen-containing diamond-like carbon (DLC:N) films are reported. The films were deposited on to highly n-doped Si (111) substrates by filtered arc deposition (FAD) with different N 2 partial pressures (0.01, 0.05, 0.1 Pa) in the deposition chamber. Their electron field emission properties were studied using a simple diode structure. It was shown that the DLC:N film possessed enhanced field emission properties when a N 2 pressure of 0.05 Pa was used. Emission current of 0.1 μA was detected under the electric field of 8.1 V/μm. An emission current density of 0.204 mA/cm 2 was obtained under 17.8 V/μm.
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