Abstract
Hydrogenated amorphous silicon (a-Si:H) is used commercially for large area device fabrication in active matrix flat panel displays as the switching element in the thin film transistors. We have found that a-Si:H thin films and its alloys can be conditioned to field emit electrons at relatively low electric fields. Emission from non-optimised films at macroscopic vacuum fields below 20 V/micron is routinely obtained. The emission field can be lowered to below 10 V/micron by further conditioning. It appears that the Schottky junction between the a-Si:H and Cr substrates or the surface of the layer needs to be modified to get electron emission at reasonably low fields. The a-Si:H needs to be fully depleted so that electrons that enter the films can get 'hot'. It should be noted that by having a three terminal device, with the third terminal placed on the thin film surface better control of the emission maybe achieved. If this were the case, it would then be possible to build a layered a-Si:H film such that the lateral conductivity of the surface layer would allow for the voltage of this layer to be modulated easily.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
